electron-beam lithography low-energy e-beam proximity lithography electron-beam proximity lithography e-beam proximity lithography LEEPL CHMO:0001403 A synthesis technique that uses electrons to transfer a pattern to a substrate. The substrate is coated with a film (or 'resist) and a beam of moderately low energy electrons (2 keV) is scanned across a patterned mask (held up to 50 μm from the substrate surface). The electrons induce chemical reactions in the resist and the desired pattern is obtained by selectively removing either exposed or non-exposed regions of the resist ('developing'). ebeam proximity lithography