electron-beam projection lithography projection reduction exposure with variable axis immersion lense PREVAIL A synthesis technique that uses electrons to transfer a pattern to a substrate. The substrate is coated with a film (or 'resist) and a beam of electrons (100 keV) is scanned across a patterned mask. The electrons induce chemical reactions in the resist and the desired pattern is obtained by selectively removing either exposed or non-exposed regions of the resist ('developing'). The lens system used to focus the electron beam has a 4-times magnification and a 250 μm2 exposure field, and was developed by IBM and Nikon. CHMO:0001405