electron-beam lithography scattering with angular limitation projection electron-beam lithography CHMO:0001406 SCALPEL A synthesis technique that uses electrons to transfer a pattern to a substrate. The substrate is coated with a film (or 'resist) and a beam of electrons (100 keV) is scanned across an ultrathin (<150 nm thickness) low-atomic-number patterned mask. Many of the electrons are scattered by the mask, so the image is formed only by those electrons that pass through the membrane without scattering. The electrons induce chemical reactions in the resist and the desired pattern is obtained by selectively removing either exposed or non-exposed regions of the resist ('developing').