charge transport measurement method deep-level transient spectroscopy 2009-05-20T10:55:16Z A method for determining the extent of intrinsic and process-induced defects in the crystalline layers within semiconductor devices. Defects arising from impurities, grain boundaries, interfaces, etc. result in the creation of traps that capture free electrons and holes. By monitoring the capacitance produced by applying a voltage pulse to the semiconductor junction at different temperatures, spectra are generated which exhibit a peak for each 'deep level' (each energy level near the center of the band gap). The height of the peak is proportional to the defect density and the emission rate and temperature dependence are characteristic for each type of defect. DLTS CDLTS capacitance deep-level transient spectroscopy https://orcid.org/0000-0001-5985-7429 capacitance deep level transient spectroscopy C-DLTS CHMO:0001770 deep level transient spectroscopy