deep-level transient spectroscopy Laplace deep-level transient spectroscopy Laplace DLTS L-DLTS Laplace transform DLTS CHMO:0001771 LDLTS 2009-05-20T11:05:17Z Laplace transform deep level transient spectroscopy Laplace transform deep-level transient spectroscopy Laplace deep level transient spectroscopy https://orcid.org/0000-0001-5985-7429 LTDLTS A method for determining the extent of intrinsic and process-induced defects in the crystalline layers within semiconductor devices. Defects arising from impurities, grain boundaries, interfaces, etc. result in the creation of traps that capture free electrons and holes. By monitoring the average capacitance produced by applying a voltage pulse to the semiconductor junction at a fixed temperatures, spectra are generated which exhibit a peak for each 'deep level' (each energy level near the center of the band gap). The height of the peak is proportional to the defect density and the emission rate is characteristic for each type of defect.