deep-level transient spectroscopy constant-capacitance deep-level transient spectroscopy https://orcid.org/0000-0001-5985-7429 constant capacitance DLTS CHMO:0001772 A method for determining the extent of intrinsic and process-induced defects in the crystalline layers within semiconductor devices. Defects arising from impurities, grain boundaries, interfaces, etc. result in the creation of traps that capture free electrons and holes. By holding the capacitance constant and monitoring the carrier emission produced when applying a voltage pulse to the semiconductor junction at different temperatures, spectra are generated which exhibit a peak for each 'deep level' (each energy level near the center of the band gap). The height of the peak is proportional to the defect density and the emission rate and temperature dependence are characteristic for each type of defect. 2009-05-20T11:09:55Z CCDLTS constant-capacitance DLTS constant capacitance deep level transient spectroscopy constant capacitance deep-level transient spectroscopy CC-DLTS