deep-level transient spectroscopy current deep-level transient spectroscopy 2009-05-20T11:15:51Z CHMO:0001773 current-DLTS I-DLTS IDLTS https://orcid.org/0000-0001-5985-7429 A method for determining the extent of intrinsic and process-induced defects in the crystalline layers within semiconductor devices. Defects arising from impurities, grain boundaries, interfaces, etc. result in the creation of traps that capture free electrons and holes. By monitoring the current produced when applying a voltage pulse to the semiconductor junction at different temperatures, spectra are generated which exhibit a peak for each 'deep level' (each energy level near the center of the band gap). The height of the peak is proportional to the defect density and the emission rate and temperature dependence are characteristic for each type of defect. current DLTS