deep-level transient spectroscopy isothermal capactiance transient spectroscopy https://orcid.org/0000-0001-5985-7429 A method for determining the extent of intrinsic and process-induced defects in the crystalline layers within semiconductor devices. Defects arising from impurities, grain boundaries, interfaces, etc. result in the creation of traps that capture free electrons and holes. By monitoring the capacitance produced by applying a voltage pulse to the semiconductor junction at constant different temperatures, spectra are generated that exhibit peaks, the height of which are proportional to the height of which are proportional to time constant for the emission rate. 2009-05-20T11:23:58Z ICTS CHMO:0001774