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    <!-- http://purl.obolibrary.org/obo/CHMO_0001774 -->

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        <rdfs:label>isothermal capactiance transient spectroscopy</rdfs:label>
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    <!-- http://purl.obolibrary.org/obo/CHMO_0001775 -->

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        <rdfs:label>normalised isothermal capacitance transient spectroscopy</rdfs:label>
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        <oboInOwl:hasExactSynonym>N-ICTS</oboInOwl:hasExactSynonym>
        <oboInOwl:hasExactSynonym>normalized ICTS</oboInOwl:hasExactSynonym>
        <oboInOwl:id>CHMO:0001775</oboInOwl:id>
        <oboInOwl:hasExactSynonym>normalized isothermal capacitance transient spectroscopy</oboInOwl:hasExactSynonym>
        <oboInOwl:hasExactSynonym>normalized-ICTS</oboInOwl:hasExactSynonym>
        <oboInOwl:hasExactSynonym>normalised-ICTS</oboInOwl:hasExactSynonym>
        <ns3:IAO_0000115>A method for determining the extent of intrinsic and process-induced defects in the  crystalline layers within  semiconductor devices. Defects arising from impurities, grain boundaries, interfaces, etc. result in the creation of traps that capture free electrons and holes. By monitoring the normalised capacitance produced by applying a voltage pulse to the semiconductor junction at constant different temperatures, spectra are generated that exhibit peaks, the height of which are proportional to time constant for the emission rate.</ns3:IAO_0000115>
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        <oboInOwl:hasExactSynonym>NICTS</oboInOwl:hasExactSynonym>
        <oboInOwl:hasExactSynonym>normalised ICTS</oboInOwl:hasExactSynonym>
        <oboInOwl:creation_date>2009-05-20T11:40:17Z</oboInOwl:creation_date>
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