photoinduced current transient spectroscopy microwave-detected photoinduced current transient spectroscopy microwave detected photoinduced current transient spectroscopy A method for determining the extent of intrinsic and process-induced defects in the crystalline layers within semiconductor devices. Defects arising from impurities, grain boundaries, interfaces, etc. result in the creation of traps that capture free electrons and holes. By monitoring the current produced by applying a microwave pulse to the semiconductor junction at different temperatures, spectra are generated which exhibit peaks, the height of which are proportional to the defect density, and the emission rate and temperature dependence are characteristic for each type of defect. microwave detected PICTS microwave-detected PICTS CHMO:0001778 microwave-detected photo-induced current transient spectroscopy MD-PICTS https://orcid.org/0000-0001-5985-7429 2009-05-20T11:55:32Z